When studying BJTs we will see that the basecollector junction of an npn BJT is a pn junction with the n-side doped lightly to ensure a high breakdown voltage BV. Assuming a silicon junction breaks...

When studying BJTs we will see that the basecollector junction of an npn BJT is a pn junction with the n-side doped lightly to ensure a high breakdown voltage BV. Assuming a silicon junction breaks down when the maximum internal electric fi eld Em reaches 300 kV/cm, what doping ND is needed to result in (a) BV 5 100 V? (b) BV 5 1 kV?