We wish to design a waveguide photodiode in GaAs, with the geometry as shown in Fig. 17.5, for operation at λ0 = 0.900μm wavelength. (a) If the photodiode has a waveguide thickness and depletion width...

We wish to design a waveguide photodiode in GaAs, with the geometry as

shown in Fig. 17.5, for operation at λ0 = 0.900μm wavelength.

(a) If the photodiode has a waveguide thickness and depletion width

W = 3μm at an applied reverse bias voltage of 40.5 V, what is the magnitude of the change in effective bandgap due to the electric field? (Assume

m∗ = 0.067m0).

(b) What length L is required to produce a quantum efficiency of 0.99?

(Assume that scattering loss and free carrier absorption are negligible).