Using the device parameters in Table 1.5, design the bias circuit of Fig. 7.6 to have at 25°C for all transistors except . For having sizes of and having a size of , what is the required value of RB?...

Using the device parameters in Table 1.5, design the bias circuit of Fig. 7.6 to have at 25°C for all transistors except . For having sizes of and having a size of , what is the required value of RB? What would the effective gate-source voltage be at 70°C assuming electron mobility varies proportional to ?