Using approximate method, the DC operating parameters of the common collector BJT amplifier are as follows: Ieq = 1.585mA and VCEQ = 15.22 V with RB1 = 180K2, RB2 =20K 2, +Vcc = +20 V, B of the Si...

Using approximate method, the DC operating parameters of the common collector BJT<br>amplifier are as follows: Ieq = 1.585mA and VCEQ = 15.22 V with RB1 = 180K2,<br>RB2 =20K 2, +Vcc = +20 V, B of the Si transistor is 250 and ro = infinity.<br>Ce = 220uF<br>RC<br>RB1<br>VCC<br>Ci- 20uF<br>10uF<br>RB2<br>HE+ Vout<br>Vint<br>Co<br>RE<br>Which of the following statements is true about the emitter resistance RE?<br>Use 820 Ohms resistor for RE.<br>Use 11K Ohms for RE.<br>O Use 1.3K Ohms resistor for RE.<br>1.5K Ohms in series with 200 Ohms resistors<br>for RE.<br>

Extracted text: Using approximate method, the DC operating parameters of the common collector BJT amplifier are as follows: Ieq = 1.585mA and VCEQ = 15.22 V with RB1 = 180K2, RB2 =20K 2, +Vcc = +20 V, B of the Si transistor is 250 and ro = infinity. Ce = 220uF RC RB1 VCC Ci- 20uF 10uF RB2 HE+ Vout Vint Co RE Which of the following statements is true about the emitter resistance RE? Use 820 Ohms resistor for RE. Use 11K Ohms for RE. O Use 1.3K Ohms resistor for RE. 1.5K Ohms in series with 200 Ohms resistors for RE.

Jun 11, 2022

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Using approximate method, the DC operating parameters of the common collector BJT amplifier are as follows: Ieq = 1.585mA and VCEQ = 15.22 V with RB1 = 180K2, RB2 =20K 2, +Vcc = +20 V, B of the Si...

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