The pFET of Fig. P3.35 has Vt 5 21.0 V, k 5 0.25 mA/V2 , and 5 0. Also, let VSS 5 2VDD 5 6 V. (a) Specify RD and RS to bias the FET at the edge of saturation (EOS) with ID 5 0.5 mA.
(b) Repeat, but to bias the FET at ID 5 2 mA and VSD 5 2 V. (c) What happens if RD in part (b) is doubled in value? What is the new operating point of the FET?
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