Solve both questionsExtracted text: The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V. (i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN. (ii) Calculate the output resistance of the amplifier, Ro. P+10V R1 Rsi = 5 kn Ro ww Vs O+vo R2 Rs = 1.5 kn R= 5 kn 3 - 10V ww wwExtracted text: (b) For the circuit shown in Figure Fig. 2(b), the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 1 = 0. (i) Design the circuit such that Ipo = 0.5 mA and Vpso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi Q +2V Rp Ccz o+ vo R= 10 kN RG= 200kN v Rs Cs - 10V 6

The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V. (i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN. (ii) Calculate the output resistance of the...

Solve both questions

The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V.<br>(i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN.<br>(ii) Calculate the output resistance of the amplifier, Ro.<br>P+10V<br>R1<br>Rsi =<br>5 kn<br>Ro<br>ww<br>Vs<br>O+vo<br>R2<br>Rs =<br>1.5 kn<br>R=<br>5 kn<br>3 - 10V<br>ww<br>ww<br>

Extracted text: The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V. (i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN. (ii) Calculate the output resistance of the amplifier, Ro. P+10V R1 Rsi = 5 kn Ro ww Vs O+vo R2 Rs = 1.5 kn R= 5 kn 3 - 10V ww ww
(b) For the circuit shown in Figure Fig. 2(b), the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 1 = 0. (i) Design the circuit such that Ipo = 0.5 mA and Vpso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi Q +2V Rp Ccz o+ vo R= 10 kN RG= 200kN v Rs Cs - 10V 6

(b) For<br>the circuit shown in Figure Fig. 2(b),<br>the<br>MOSFET<br>parameters<br>are: VTN = 1.2 V,<br>K, = 0.25 mA/V² and 1 = 0.<br>(i) Design the circuit such that Ipo = 0.5 mA and Vpso = 3.0 V<br>(ii) Determine the small-signal voltage gain A, = vo/vi<br>Q +2V<br>Rp<br>Ccz<br>o+ vo<br>R=<br>10 kN<br>RG=<br>200kN<br>v<br>Rs<br>Cs<br>- 10V 6<br>

Extracted text: (b) For the circuit shown in Figure Fig. 2(b), the MOSFET parameters are: VTN = 1.2 V, K, = 0.25 mA/V² and 1 = 0. (i) Design the circuit such that Ipo = 0.5 mA and Vpso = 3.0 V (ii) Determine the small-signal voltage gain A, = vo/vi Q +2V Rp Ccz o+ vo R= 10 kN RG= 200kN v Rs Cs - 10V 6

Jun 11, 2022

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The parameters of MOSFET circuit shown in Fig. 2(c) are, k, = 4 mA/V², VrN = 1.5 V and V = ∞ V. (i) Design the circuit such that Ipo = 1.0 mA and R = 20 kN. (ii) Calculate the output resistance of the...

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