The BiMOS telescopic cascode of Fig. P4.33 uses M3 to further raise the values of Ro and aoc provided by the bipolar cascode. Assuming the BJTs have gm 5 1y(50 V), r5 5 kV, and ro 5 100 kV (for simplicity assume r5 `), and the FET has gm 5 1y(2 kV), ro 5 30 kV, and 5 0.15, fi nd the voltage gains a1, a2, and a3 of the individual transistors, as well as Ro and aoc. Compare to the case in which M3 is absent, so Q2’s collector is terminated on the I source, and the output is taken directly from Q2’s collector. Comment on the differences.
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