Suppose a nMOS process has n 5 500 cm2 /Vs, tox 5 25 nm, and a native threshold of 20.1 V. (a) Assuming 5 0, specify the implant type and dosage Ni as well as the WyL ratio needed to create an nMOSFET...

Suppose a nMOS process has n 5 500 cm2 /Vs, tox 5 25 nm, and a native threshold of 20.1 V. (a) Assuming 5 0, specify the implant type and dosage Ni as well as the WyL ratio needed to create an nMOSFET that gives ID(EOS) 5 8 A with VGS 5 1.0 V, and ID(EOS) 5 98 A with VGS 5 2.0 V. (b) Repeat, but for an nMOSFET that gives ID(EOS) 5 25 A with VGS 5 0 V, and ID(EOS) 5 225 A with VGS 5 1.0 V.