QUESTION 1 What is the built-in voltage in an abrupt pn junction with p-side doping of 8.1*10^14/cc and n-side doping of 6.25*10^14/cc at 300K in silicon. Three significant digits and fixed point...

Question 4

Extracted text: QUESTION 1 What is the built-in voltage in an abrupt pn junction with p-side doping of 8.1*10^14/cc and n-side doping of 6.25*10^14/cc at 300K in silicon. Three significant digits and fixed point notation. QUESTION 2 What is the depletion width in microns with a 1V reverse bias for an abrupt junction with p-side doping of 7.46*10^18/cc and n-side doping of 5.74*10417/cc at 300K in silicon. Three significant digits and fixed point notation. QUESTION 3 What is the depletion width in microns with a zero bias for an abrupt junction with p-side doping of 4.62*10^16/cc and n-side doping of 3.61*10^16/cc at 300K in silicon. Three significant digits and fixed point notation. QUESTION 4 What is the maximum electric field in kV/cm an abrupt pn junction with p-side doping of 6.17*10^14/cc and n-side doping of 5.25*10^15/cc at 300K in silicon and zero bias. Three significant digits and fixed point notation. Click Save and Submit to save and submit. Click Save All Answers to save all answers.