Question 1-) A piece of crystalline silicon (Si) is doped uniformly with 2 x 1017 phosphorus atoms/cm'. For Si, B (material dependent parameter) = 7.3 x 1015 cm ³K 3/2 bandgap) = 1.12 eV, k (Boltzmann...

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Extracted text: Question 1-) A piece of crystalline silicon (Si) is doped uniformly with 2 x 1017 phosphorus atoms/cm'. For Si, B (material dependent parameter) = 7.3 x 1015 cm ³K 3/2 bandgap) = 1.12 eV, k (Boltzmann constant) = 8.62 x 105 eV/K or k = 1.38 x 10-23 1/K, 1eV = 1.6 × 10-19 . Eg (energy a-) What type of material is this? b-) What are the hole and electron concentrations at room temperature (T = 300 K) ? c-) What are the hole and electron concentrations at 350 K?