Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 Rp||RL and RL > Rp. 500kN, RL 100kN, R, 5kN R2 fL = 9.9kH z, fc2 = fL/10 C1 = 8nF +VDD R Rp C2...

Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of<br>20 < |Amia| < 25. Zin(mid) 2 50kl, a low 3-dB frequency of fi < 10kHz, and a high 3-dB frequency of<br>fn = 100KH z. (<br>Assume<br>1mA, and V, = -3.5V<br>Ipss = 12.5mA, ID<br>r. > Rp||RL and RL > Rp.<br>500kN, RL<br>100kN, R,<br>5kN<br>R2<br>fL = 9.9kH z, fc2 = fL/10<br>C1 = 8nF<br>+VDD<br>R<br>Rp<br>C2<br>R,<br>M1<br>RSRI<br>Vo<br>RL<br>R2<br>RSR2<br>Cs<br>Zin<br>Figure 4<br>H<br>

Extracted text: Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 < |amia|="">< 25.="" zin(mid)="" 2="" 50kl,="" a="" low="" 3-db="" frequency="" of="" fi="">< 10khz,="" and="" a="" high="" 3-db="" frequency="" of="" fn="100KH" z.="" (="" assume="" 1ma,="" and="" v,="-3.5V" ipss="12.5mA," id="" r.=""> Rp||RL and RL > Rp. 500kN, RL 100kN, R, 5kN R2 fL = 9.9kH z, fc2 = fL/10 C1 = 8nF +VDD R Rp C2 R, M1 RSRI Vo RL R2 RSR2 Cs Zin Figure 4 H

Jun 11, 2022

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Q 4. Design a common-source depletion MOSFET amplifier as shown in Figure 4 to give a midband gain of 20 Rp||RL and RL > Rp. 500kN, RL 100kN, R, 5kN R2 fL = 9.9kH z, fc2 = fL/10 C1 = 8nF +VDD R Rp C2...

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