Physical Structure of the MOSFET 3.1 (a) reveals the presence of a parasitic npn BJT whose base region is the p2 body (with Bn as its terminal), and whose emitter and collector regions are the n1...

Physical Structure of the MOSFET 3.1 (a) reveals the presence of a parasitic npn BJT whose base region is the p2 body (with Bn as its terminal), and whose emitter and collector regions are the n1 source and drain regions (with Sn and Dn as their terminals). Would it be possible to make this BJT operate with a reasonably high current gain? Could it serve any useful function? (c) Identify two additional parasitic BJTs (you may wish to search the web for “CMOS latchup”).