One Si wafer has a concentration of 2 × 1018 antimony dopant atoms/cm 3, and a second Si wafer contains 4 × 1018 gallium atoms/cm 3. a. What is the majority carrier in each wafer? b. At what...

One Si wafer has a concentration of 2 × 1018 antimony dopant atoms/cm 3, and a second Si wafer contains 4 × 1018 gallium atoms/cm 3.

a. What is the majority carrier in each wafer?

b. At what temperature will both wafers contain the same number of ionized carriers?