(mA) Vas=+8 V 10 9 Vas=+7 V 7 Ves=+6 V Vas=+5 V Ves=+4 V 1 Ves=+3 V Vas=+2 V 5 10 15 20 25 Vps (V) Figure -1 Drain characteristics of a FET device is given in Figure-1; a) Define the type of the...

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Extracted text: (mA) Vas=+8 V 10 9 Vas=+7 V 7 Ves=+6 V Vas=+5 V Ves=+4 V 1 Ves=+3 V Vas=+2 V 5 10 15 20 25 Vps (V) Figure -1 Drain characteristics of a FET device is given in Figure-1; a) Define the type of the possible FET device having these characteristics, sketch the transfer characteristics directly from the drain characteristics, and what can be possible cut-off for V GS and saturation value for I from the drain characteristics b) Calculate and sketch the transfer characteristics by using Shockley's equation, compare the results in the transfer characteristics in possible cut-off for V and saturation value for I and GS Shockley's equation. Calculate and plot a load line c) Define a Q point from your calculations, define Io and V values from the transfer GSQ characteristic curve and load line, design and plot a proper voltage divider biasing circuit from your calculations above, calculate and define all the required peripheral components values and source voltage for your biasing circuit design.