Let the pMOSFET of have an n1-type polysilicon gate with ND 5 2 3 1019 cm23 , an n2-type bulk with ND 5 1016 cm23 , and to x 5 30 nm. (a) Sketch and label the equilibrium potential (x). (b) Find the...

Let the pMOSFET of have an n1-type polysilicon gate with ND 5 2 3 1019 cm23 , an n2-type bulk with ND 5 1016 cm23 , and to x 5 30 nm. (a) Sketch and label the equilibrium potential (x). (b) Find the gate-to-body voltage needed to eliminate the space-charge layers. (c) Find the gate-to-body voltage VGB 0 needed to bring about the onset of strong inversion. (d) Sketch and label (x) for VGB 5 VGB 0.