In the following circuit, the nMOS has a threshold voltage of Vr = 1.0 Vand K = 2 mA/VÅlso given that R1 = 3 kNVpp identical with vp. = 0.9(i.e. use CVD model for the diodes). Our task is to set the...

Extracted text: In the following circuit, the nMOS has a threshold voltage of Vr = 1.0 Vand K = 2 mA/VÅlso given that R1 = 3 kNVpp identical with vp. = 0.9(i.e. use CVD model for the diodes). Our task is to set the value of Rp such that the MOSFET will be operating at the edge of saturation. What's edge of saturation? We know in the triode region vps < vcs="" –="" vrwhereas="" in="" the="" saturation="" region="" vps=""> vGs – VrHence, the edge of saturation means when vps = vGS - VAt this mode, both the equations for In in saturation mode and triode mode would give the exact 6 Vand the diodes are same result, VDD VDD Rp R1 KIKKH


Extracted text: Note that since there will be a positive current flowing through Rị from VDp to ground (as the gate current is zero), and since the current through MOSFET In = Işis also positive, all of the diodes would be ON. Hence, you don't need to use method of assumed state here. The following questions will guide you towards the solution: 1. What is the voltage of gate Va and source Vs, given that the diodes will be ON? 2. What is the drain to source voltage vps given the MOSFET is operating at the edge of saturation? What is the voltage of drain Vp? 3. What is the drain current In? 4. Finally, what should be the value of Rp?