In the EC circuit of let VCC 5 2VEE 5 6 V, RC1 5 RC2 5 12 kV, RE1 5 RE XXXXXXXXXXV, and IEE 5 0.5 mA. Moreover, assume the IEE source has a parallel resistance REE 5 150 kV, and the BJTs have...

In the EC circuit of let VCC 5 2VEE 5 6 V, RC1 5 RC2 5 12 kV, RE1 5 RE2 5 250 V, and IEE 5 0.5 mA. Moreover, assume the IEE source has a parallel resistance REE 5 150 kV, and the BJTs have 0 5 125 and ro 5 200 kV. (a) Using half-circuit analysis, fi nd adm, acm, Rid, Ric, and the CMRR (both for single-ended and double-ended utilization). (b) If the BJTs suffer from 63% mismatches in their emitter areas AE1 and AE2 and 65% mismatches in their effective base widths WB1 and WB2, how is the CMRR (double-ended utilization) affected? Consider both the worst-case scenario and the case in which the mismatches are uncorrelated. Hint: develop an expression for Dgmygm in terms of DAEyAE and DWByWB.