In the BiMOS circuit of Fig. P4.11 the emitter follower Q is biased by the depletion FET M, here operated as a current sink. Assume the BJT has F 5 200, VA 5 50 V, VBE(on) 5 0.7 V, and VCE(EOS) 5 0.2...

In the BiMOS circuit of Fig. P4.11 the emitter follower Q is biased by the depletion FET M, here operated as a current sink. Assume the BJT has F 5 200, VA 5 50 V, VBE(on) 5 0.7 V, and VCE(EOS) 5 0.2 V, and the FET has Vt 5 21.0 V, k9 5 100 A/ V 2 , and 5 1y(25 V). (a) Specify the WyL ratio to bias the BJT at 5 mA. (b) Find Ri , Ro, and the gain a 5 voyvi . (c) Estimate vO(max) and vO(min), the upper and lower limits of the linear output swing, as well as the corresponding values of vI .