In a particular process, a metal-metal parallel plate capacitor can be realized with a density of 7 fF/ and a metal-metal sidewall capacitor can provide a density of 10 fF/ . What would be the area of...

In a particular process, a metal-metal parallel plate capacitor can be realized with a density of 7 fF/ and a metal-metal sidewall capacitor can provide a density of 10 fF/ . What would be the area of a 1 pF capacitor realized using each approach? Compare this with the area of a 1 pF MOS capacitor in a 45-nm CMOS processes using the parameters in Table 1.5.