Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at...

Example 10-1:<br>1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon<br>transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor<br>S(Ico) at 3.8.<br>2. For the circuit designed in part (1), determine the change in Ic if a change in<br>operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from<br>0.7 to 0.5 V, and B increases 25%.<br>3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1),<br>if Ico = 0.2 µA and VBE = 0.7 V.<br>

Extracted text: Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at 3.8. 2. For the circuit designed in part (1), determine the change in Ic if a change in operating conditions results in Ico increasing from 0.2 to 10 µA, VBE drops from 0.7 to 0.5 V, and B increases 25%. 3. Calculate the change in Ic from 25° to 75°C for the same circuit designed in part (1), if Ico = 0.2 µA and VBE = 0.7 V.

Jun 11, 2022

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Example 10-1: 1. Design a voltage-divider bias circuit using a Vcc supply of +18 V, and an npn silicon transistor with B of 80. Choose Rc = 5RE, and set Ic at 1 mA and the stability factor S(Ico) at...

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