Estimate the hole and electron concentrations in silicon doped with arsenic at a concentration of at a temperature 22 °C above room temperature. Is the resulting material n type or p type? For the pn...

Estimate the hole and electron concentrations in silicon doped with arsenic at a concentration of at a temperature 22 °C above room temperature. Is the resulting material n type or p type?

For the pn junction of Example 1.2, estimate the new built-in potential, , when the temperature is increased 11 °C above room temperature.