EECE 1312 Electronics (c) The parameters of MOSFET circuit shown in Fig. 2(c) are, kn = 4 mA/V², V7N = 1.5 V and V, = 00 V. (1) Design the circuit such that Ipg = 1.0 mA and R, = 20 kn. %3D (ii)...

EECE 1312 Electronics<br>(c) The parameters of MOSFET circuit shown in Fig. 2(c) are, kn = 4 mA/V², V7N = 1.5 V and V, = 00 V.<br>(1) Design the circuit such that Ipg = 1.0 mA and R, = 20 kn.<br>%3D<br>(ii) Calculate the output resistance of the amplifier, Ro.<br>우+10V<br>Rsi =<br>5 kn<br>Ca<br>o+ vo<br>Rs=<br>1.5 kn<br>5 kn<br>- 10V<br>Fig. 2(c)<br>ww<br>

Extracted text: EECE 1312 Electronics (c) The parameters of MOSFET circuit shown in Fig. 2(c) are, kn = 4 mA/V², V7N = 1.5 V and V, = 00 V. (1) Design the circuit such that Ipg = 1.0 mA and R, = 20 kn. %3D (ii) Calculate the output resistance of the amplifier, Ro. 우+10V Rsi = 5 kn Ca o+ vo Rs= 1.5 kn 5 kn - 10V Fig. 2(c) ww

Jun 11, 2022

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EECE 1312 Electronics (c) The parameters of MOSFET circuit shown in Fig. 2(c) are, kn = 4 mA/V², V7N = 1.5 V and V, = 00 V. (1) Design the circuit such that Ipg = 1.0 mA and R, = 20 kn. %3D (ii)...

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