Drain characteristics of a FET device is given as in the Figure-1; a) Define the type of the possible FET device having this characteristics, calculate and sketch the transfer characteristics by by...

Extracted text: Drain characteristics of a FET device is given as in the Figure-1; a) Define the type of the possible FET device having this characteristics, calculate and sketch the transfer characteristics by by using Shockley's equation and the characteristic curves given in Figure-1. Which values can be possible for cut-off Ve and saturation V extracted GS DS from the drain characteristics. b) Design and plot a proper fixed biasing circuit from your calculations above and use the required DC values obtained from the network output of Q.1. Explain the tasks of all the components used in the design. c) Calculate all the required peripheral components values in your design by taking account the saturation level of VDs at VGs=+6 V and and choosing operating region values in drain characteristic curves. Calculate and plot a loadline for the current network, find Q point and point out In and V values close to Q point. GSQ DQ o (mA) o (mA) Vas +9 V 10 10 9. 8. Vasa+7V 7 7. Vas+6 V Vasa+5 V Vasond V Vas+3 V Vas 2V 2. 4 5 7. 8 9 Ves 10 15 20 25 Vas (V) (а) (b) Figure-1 2.