Consider a short-base diode that has been doped with ND 5 1017/cm3 atoms of phosphorous and NA 5 1016/cm3 atoms of boron, and has been fabricated with Wp 5 Wn 5 1 m and a cross-sectional area of (25...

Consider a short-base diode that has been doped with ND 5 1017/cm3 atoms of phosphorous and NA 5 1016/cm3 atoms of boron, and has been fabricated with Wp 5 Wn 5 1 m and a cross-sectional area of (25 m) 3 (50 m). (a) Find i if the device is forward-biased with v 5 700 mV. (b) Estimate the error incurred in ignoring xp and xn compared to Wp and Wn.