Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1.5x1016electron/m³) with the doping concentration of (2x10 atoms/m) of the phosphorus and (1×101...

Extracted text: Calculate the drift current in silicon at room temperature. If the intrinsic carrier concentration of (1.5x1016electron/m³) with the doping concentration of (2x10 atoms/m) of the phosphorus and (1×101 atoms/m) of Boron. Given the mobility for the electrons (0.15m?/V.s) and the mobility for the holes (0.05m?/V.s) and the electric field (100V/m). 66.2mA O 64.2mA O 67.2mA 65.2mA O 66.5mA O 64.5mA O