Below is a list of semiconductor materials and their bandgaps.
Eg[eV]
Si 1.1
GaAs 1.4
GaSb 0.81
GaP 2.3
InAs 0.36
(a) Based solely on bandgap energy, which of these materials could possibly
be used to make a detector for the light from a GaAs laser?
(b) Which of the following ternary compounds could possibly be used to
make a detector for the light from a GaAs laser?
GaAs(1−x)Sbx GaAs(1−x)Px Ga(1−x)InxAs
(c) If a reverse biased Si photodiode with a quantum efficiency of η = 80%
and an area of 1 cm2 is uniformly illuminated with the light from a GaAs
laser to an intensity of 10 mW/cm2 what is the photocurrent which flows?
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