At T= OK, the intrinsic carrier density in Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and at T = 300K the intrinsic electron concentration of Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and the intrinsic hole...

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Extracted text: At T= OK, the intrinsic carrier density in Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and at T = 300K the intrinsic electron concentration of Si is (0, 0, 1.0 x 1010, 5 x 1022) cm³ and the intrinsic hole concentration is (LARGER ABOUT THE SAME, SMALLER) than the intrinsic electron concentration and this compares to the atomic density of crystalline Si which has about (1.5 x 1010, 1018, 5 x 10", Undetermined) atoms/cm³.