Assume an nMOSFET process in which the modulation parameter scales with the channel length L according to 5 (0.1m)yL V21 , with L in m. Also, let k9 5 50 A/V2 . (a) If a particular device has WyL 5...

Assume an nMOSFET process in which the modulation parameter scales with the channel length L according to 5 (0.1m)yL V21 , with L in m. Also, let k9 5 50 A/V2 . (a) If a particular device has WyL 5 (10 m)y (2 m) and is driven with VOV 5 2 V, fi nd ID at VDS 5 5 V and at VDS 5 10 V. What is the value of ro? (b) Repeat part (a) if both W and L are doubled. (c) Repeat part (a) if both W and L are halved. (d) Specify W and L so that with VOV 5 1 V the device gives ID(EOS) 5 1 mA and has ro 5 100 kV.