As the gate oxide thickness decreases in a MOSFET, the threshold voltage, Vr, (INCREASES, DECREASES, ESSENTIALLY REMAINS THE SAME, IS 26 mV AT 300°C) and as the channel doping density between the...

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Extracted text: As the gate oxide thickness decreases in a MOSFET, the threshold voltage, Vr, (INCREASES, DECREASES, ESSENTIALLY REMAINS THE SAME, IS 26 mV AT 300°C) and as the channel doping density between the source and drain increases in a MOSFET, the threshold voltage, Vr, (INCREASES, DECREASES, ESSENTIALLY REMIAINS THE SAME, IS 26 mV at 300°C).