An IC designer, seeking to combine the advantages of BJTs and MOSFETs in a BiMOS cascode, is evaluating the two circuits of Fig. P4.37. Both BJTs have gm 5 1y(25 V), r5 4 kV, and ro 5 50 kV (for...

An IC designer, seeking to combine the advantages of BJTs and MOSFETs in a BiMOS cascode, is evaluating the two circuits of Fig. P4.37. Both BJTs have gm 5 1y(25 V), r5 4 kV, and ro 5 50 kV (for simplicity assume r5 `), and both FET have gm 5 1y(1 kV), ro 5 20 kV, and 5 0.2. (a) Find Ri , Ro, and aoc for each circuit. (b) Compare the two cascodes in terms of the above three parameters, and state which one, if any, is better. How do they compare against an all-bipolar and an all-MOS realization?