An engineer is using the setup to characterize a BJT. (a) Given that with iB 5 0.8 A the BJT gives iC 5 100 A for vCE 5 0.7 V, what is the value of F? (b) If raising vCE from 0.7 V to 5.7 V while...

An engineer is using the setup to characterize a BJT. (a) Given that with iB 5 0.8 A the BJT gives iC 5 100 A for vCE 5 0.7 V, what is the value of F? (b) If raising vCE from 0.7 V to 5.7 V while keeping iB constant at 0.8 A causes iC to change from 100 A to 110 A, what is the value of VA? (c) If it is found that with vCE 5 0.7 V the maximum fT achievable with this BJT is 8.0 GHz, what is the value of F? What is the effective base width WB if Dn 5 10 cm2 /s? (d) If it is found that with vCE 5 0.7 V fT 5 4.0 GHz at iC 5 0.1 mA, what is the value of the sum (Cje 1 C)? (e) If raising vCE from 0.7 V to 5.7 V while adjusting iB so as to keep iC constant at 100 A causes fT to increase from 4.0 GHz to 4.30 GHz, what are the values of Cje0 and C0? Assume Cje 5 2Cje0, c 5 0.6 V, and mc 5 1y2. (f) Suppose the collector terminal is disconnected so as to leave only the B-E junction active. If it is found that with iB 5 100 A the BJT gives vBE 5 650 mV and with iB 5 200 A it gives vBE 5 700 mV, what is the value of rb? Hint: by a well-known rule of thumb, doubling iB should require only an 18-mV increase in vBE. The additional voltage drop is due to iB fl owing through the bulk resistance rb appearing in series with the pn junction formed by the base and emitter regions. (g) Sketch and label the high-frequency equivalent of the BJT at the operating point Q(IC, VCE) 5 Q(0.5 mA, 3 V).