(a) Why Ge material has a lower Vhi than Si at T = 300 K and GaAs has a higher Vbi than Si at T = 300 K? Consider doping of both p and n regions are fixed for Ge, Si and GaAs diode being considered...

Extracted text: (a) Why Ge material has a lower Vhi than Si at T = 300 K and GaAs has a higher Vbi than Si at T = 300 K? Consider doping of both p and n regions are fixed for Ge, Si and GaAs diode being considered here. (b) A silicon p-n junction diode at T = 300 K under zero bias has doping concentrations of NA 4.5 × 1016 / cm³ and Np = 5.6 × 1017 / cm³. Value of ni at T = 300 K is 1.5 × 1010 / cm3 . Calculate (i) built in potential (ii) total depletion width W in um (iii) the depletion capacitance in F/cm2 Note: give two of the question's answers completely. Read the questions carefully several times and give correct answer. Don't give current existing answers in Chegg. As most of the existing answers of these question in Chegg is wrong. If you do not follow the instruction, I will give you negative review.