A silicon wafer of diameter D=120 mm. and emissivity of 0.6 is at an initial temperature of Ti 3250C and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur = 350C....


A silicon wafer of diameter D=120 mm. and emissivity of 0.6 is at an initial temperature of Ti 3250C and is allowed to<br>cool in quiescent, ambient air and large surroundings for which Tair Tsur = 350C. What is the rate of cooling from the<br>upper surface of the wafer? Properties of Air: k- 0.0373 W/m.C. v = 32.39*10-6 m2/s, alpha 47.210-6 m2/s Pr 0.686<br>B- 1/Tf = 0.0022 K-1.<br>Select one:<br>O a. 344 W<br>O b. 53 W<br>O c. 627 W<br>O d. 86 W<br>

Extracted text: A silicon wafer of diameter D=120 mm. and emissivity of 0.6 is at an initial temperature of Ti 3250C and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur = 350C. What is the rate of cooling from the upper surface of the wafer? Properties of Air: k- 0.0373 W/m.C. v = 32.39*10-6 m2/s, alpha 47.210-6 m2/s Pr 0.686 B- 1/Tf = 0.0022 K-1. Select one: O a. 344 W O b. 53 W O c. 627 W O d. 86 W

Jun 11, 2022
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