A silicon wafer of diameter D -120 mm, and emissivity of 0.6 is at an initial temperature of Ti- 325oC and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur 35oC....


A silicon wafer of diameter D -120 mm, and emissivity of 0.6 is at an initial temperature of Ti- 325oC and is allowed to<br>cool in quiescent, ambient air and large surroundings for which Tair Tsur 35oC. What is the rate of cooling from the<br>upper surface of the wafer? Properties of Air: k0.0373 W/m.C.v- 32.3910-6 m2 alpha 47.2106 m2/s Pr 0.686.<br>B= 1/Tf = 0.0022 K-1.<br>Select one:<br>O a. 344 W<br>O b. 53 W<br>O . 627 W<br>O d. 86 W<br>

Extracted text: A silicon wafer of diameter D -120 mm, and emissivity of 0.6 is at an initial temperature of Ti- 325oC and is allowed to cool in quiescent, ambient air and large surroundings for which Tair Tsur 35oC. What is the rate of cooling from the upper surface of the wafer? Properties of Air: k0.0373 W/m.C.v- 32.3910-6 m2 alpha 47.2106 m2/s Pr 0.686. B= 1/Tf = 0.0022 K-1. Select one: O a. 344 W O b. 53 W O . 627 W O d. 86 W

Jun 11, 2022
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