A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10³ Q.cm. If an accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per 10 Si atoms, find...

A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10³ Q.cm. If an<br>accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per<br>10<br>Si atoms, find new resistivity then draw EBD. (For Si there is 5×10²² atom /cm³ ,D,=13<br>cm/sec and D=34 cm/sec)<br>

Extracted text: A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10³ Q.cm. If an accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per 10 Si atoms, find new resistivity then draw EBD. (For Si there is 5×10²² atom /cm³ ,D,=13 cm/sec and D=34 cm/sec)

Jun 10, 2022

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A- Prove that resistivity of intrinsic Si sample at 300°K equal to 237.35×10³ Q.cm. If an accepter type impurity is added to the in extent of with doping ratio 1 accepter atom per 10 Si atoms, find...

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