A process engineer needs to double the depth at which a given concentration of boron is found in Si after a given diffusion time. To do this, the engineer could: a) increase the temperature used by 4X...

A process engineer needs to double the depth
at which a given concentration of boron is found in Si after a given diffusion time. To do this, the engineer could:
a) increase the temperature used by 4X
b) increase the diffusion time used by 4X
c) increase the diffusion time used by 2X
d) a and b
e) none of the above
EXPLAIN your answer