A GaInAs avalanche photodiode is used to detect the pulses of light emitted by a GaInAsP laser at a wavelength of 1.3μm. The photodiode has a quantum efficiency of 0.85 at this wavelength when...

A GaInAs avalanche photodiode is used to detect the pulses of light emitted

by a GaInAsP laser at a wavelength of 1.3μm. The photodiode has a quantum

efficiency of 0.85 at this wavelength when operated at low reverse bias voltage,

and has a photomultiplication factor of 103 when properly biased at avalanche

breakdown. The area of the photodiode is 10−4 cm2.

What photocurrent will be produced when the photodiode is biased in the

avalanche regime and a light intensity of 10−3 W/cm2 from the laser is falling

on it?