(a) Find the room-temperature (300 K) electron and hole concentrations n and p for a bulk silicon slab that has been doped fi rst with 4 3 1014/cm3 atoms of boron, and subsequently with 1015/cm3 atoms...

(a) Find the room-temperature (300 K) electron and hole concentrations n and p for a bulk silicon slab that has been doped fi rst with 4 3 1014/cm3 atoms of boron, and subsequently with 1015/cm3 atoms of arsenic. Is the slab p-type or n-type? (b) Find n and p if T is raised to 400 K. (c) If a slab of n-type silicon with ND 5 1016/cm3 is to be turned into a p-type slab with a hole concentration p 5 5 3 1015/cm3 , what acceptor concentration NA is needed? (d) Find the mobilities n and p of the p-type slab of (c).