A certain nMOSFET is to be operated at low values of vDS as a voltage-controlled resistance rDS. The FET has k9 5 50 A/V2 , W 5 10 m, L 5 1 m, and Vt 5 1.0 V. (a) Find the range of values of VGS that will cause rDS to vary from 500 V to 20 kV. (b) For the range of VGS values of part (a), what is the range of rDS values if W is halved? If L is halved? If both W and L are halved? If both W and L are doubled? If W is raised to 50 m while L is kept constant at 1 m?
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