A certain nMOSFET is operated in saturation with a 1-V overdrive, and gives ID 5 110 A at VDS 5 2 V, and ID 5 120 A at VDS 5 4 V. (a) Find and ro. (b) Find ID(EOS). (c) If the FET is known to have L 5...

A certain nMOSFET is operated in saturation with a 1-V overdrive, and gives ID 5 110 A at VDS 5 2 V, and ID 5 120 A at VDS 5 4 V. (a) Find and ro. (b) Find ID(EOS). (c) If the FET is known to have L 5 1 m in the limit VDS → 0, what is its actual channel length Lactual at VDS 5 5 V? Hint: exploit the fact that Lactual 5 L 2 DL 5 Ly(1 1 VDS). (d) For what value of VDS does the device have Lactual 5 (2y3)L?