A bipolar IC designer is using a planar process with npn BJTs having Cje0 5 1.0 pF, F 5 0.3 ns, and C0 5 0.4 pF, and lateral pnp BJTs having Cje0 5 0.5 pF, F 5 25 ns, and C0 5 1.5 pF. Both devices...

A bipolar IC designer is using a planar process with npn BJTs having Cje0 5 1.0 pF, F 5 0.3 ns, and C0 5 0.4 pF, and lateral pnp BJTs having Cje0 5 0.5 pF, F 5 25 ns, and C0 5 1.5 pF. Both devices have ucu5 0.55 V and mc 5 1y2. (a) Compare their fT s at IC 5 1 mA and basecollector reverse voltages of 5 V, and comment. (b) Repeat if IC is lowered to 0.01 mA, compare with (a), and comment.