(a) Assuming an nMOS process with bulk doping NA 5 1016 cm23 , to x 5 50 nm, and a native threshold of 20.1 V, fi nd the implant type and dosage Ni needed to create an enhancementtype device with Vt 0...

(a) Assuming an nMOS process with bulk doping NA 5 1016 cm23 , to x 5 50 nm, and a native threshold of 20.1 V, fi nd the implant type and dosage Ni needed to create an enhancementtype device with Vt 0 5 1.0 V. (b) Sketch and label the plot of Vt versus VSB for 0 # VSB # 5 V. (c) Repeat parts (a) and (b), but for a depletiontype device with Vt 0 5 20.5 V. What value of VSB yields Vt 5 0 V? Vt 5 10.5 V?