(a) Assuming a pMOS process with bulk doping ND XXXXXXXXXXcm23 , tox 5 40 nm, and a native threshold of 21.5 V, fi nd the implant type and dosage Ni needed to create an enhancementtype device with Vt...

(a) Assuming a pMOS process with bulk doping ND 5 2 3 1016 cm23 , tox 5 40 nm, and a native threshold of 21.5 V, fi nd the implant type and dosage Ni needed to create an enhancementtype device with Vt 0 5 21 V. (b) Sketch and label the plot of Vt versus VBS over the range 0 # VBS # 5 V. (c) Repeat parts (a) and (b), but for a depletiontype device with Vt 0 5 1.0 V.