4.68 Using the exponential diode characteristic, show that for vs and v, both greater than zero, the circuit of Fig. 4.23(a) has the transfer characteristic vo = Us – Up (ati, = 1 mA) – V, In(v,/R)...


4.68 Using the exponential diode characteristic, show that
for vS and vO both greater than zero, the circuit of Fig. 4.23(a)
has the transfer characteristic
vO
= vS
−vD

at iD
=1 mA

−VT ln

vO/R

where vS and vO are in volts and R is in kilohms. Note that
this relationship can be used to obtain the voltage transfer
characteristic vO vs. vS by finding vS corresponding to various
values of vO.


4.68 Using the exponential diode characteristic, show that<br>for vs and v, both greater than zero, the circuit of Fig. 4.23(a)<br>has the transfer characteristic<br>vo = Us – Up (ati, = 1 mA) – V, In(v,/R)<br>where vs and v, are in volts and R is in kilohms. Note that<br>this relationship can be used to obtain the voltage transfer<br>characteristic v, vs. v, by finding v, corresponding to various<br>values of vo.<br>

Extracted text: 4.68 Using the exponential diode characteristic, show that for vs and v, both greater than zero, the circuit of Fig. 4.23(a) has the transfer characteristic vo = Us – Up (ati, = 1 mA) – V, In(v,/R) where vs and v, are in volts and R is in kilohms. Note that this relationship can be used to obtain the voltage transfer characteristic v, vs. v, by finding v, corresponding to various values of vo.
D<br>(a)<br>(+1<br>

Extracted text: D (a) (+1

Jun 11, 2022
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